u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 npn MJE1660, mje1661 15 ampere power transistors silicon 40-60 volts 90 watts silicon medium-power transistors . designed for use in power amplifier and switching applications. high collector current - 1c = 15 adc high dc current gain - = 10(min)@lc= 15 adc maximum ratings rating collector-emitter voltage collector-base voltage emitter-base voltage collector current-continuous base current total power dissipation @ tc ? 25c derate above 25c operating and storage junction temperature range symbol vceo vcb veb >c ib pd tj. tstg MJE1660 40 40 mje16k1 60 60 5.0 15 5.0 90 072 -65 to +150 unit vdc vdc vdc adc adc watts w/c c thermal characteristics characteristics thermal resistance. junction to case symbol "jc max 1 39 unit c/w v t 1 c 9 ^- ? * -?-b-?- ur. f&i \ 1~5"3 ^f m /i \ ~~i t hh jt hoi-*- ri t" ?? "j-j c. dim a b c d f g h j k m q r u v millimeters win 16.13 12.57 3.18 109 3.51 42 267 0.813 15.11 9 470 1.91 622 203 max 1638 12.83 3.43 124 3.76 bsc 2.92 q.864 16.38 fyp 4.95 2.16 648 - t -' -7 uk k * -uuj style 2 pin (.emitter 2 collector 3. base inches min 0.636 0495 0.125 0.043 0.138 0.16 0.105 0.032 0.596 9 0.185 0.075 0.245 0.080 max 0.645 0.505 0.135 0.049 0.146 bsc 0.115 0.034 0645 'yp 0.195 j 0.085 ^0.255 - vhen mounting the d*vic*. torqu* not o exceed 80 in.-lb. f lead bending is required, use suitable lamps or other support* between tran- istor case and point of bend. to-225ab type quality semi-conductors
electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol win max unit off characteristics collector emitter sustaining voltage hi (lc= 200madc. ib = 0) mje 1660 mje1661 collector cutoff current (vce = 30 vdc, ib = 0) collector cutoff current (vce = 40 vdc. vbe = 0) mje 1660 (vce ' 60 vdc, vbe = ol mje 1661 collector cutoff current (vcb = 40 vdc, ie - 0) .mje 1660 (vcb = 60 vdc. ie - 0) mje 1661 emitter cutoff current (vbe = 5.0 vdc, ie - 0) vceo(sus) 'ceo 'ces 'cbo 'ebo 40 60 _ - - - - 1.0 0.7 0.7 0.7 0.7 1.0 vdc madc madc madc madc on characteristics dc current gam (11 (lc = 5.0 adc, vce " 4.0 vdc) (lc= 15 adc, vce = 4.0 vdcl collector-emitter saturation voltage hi (lc= 15 adc, ib = 1.5 adc) base-emitter on voltage (1) dc = 15 adc, vce = 4.0 vdc) "fe vce(sat) vbe(on) 20 10 - ? 100 - 1.8 2.5 _ vdc vdc dynamic characteristics current-gain-bandwidth product dc= 1.0 adc, vce = 10 vdc, f = 1.0mhz) small-signal current gain |
